DHS180N10LB Datasheet. Specs and Replacement

Type Designator: DHS180N10LB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 358 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO251

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DHS180N10LB substitution

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DHS180N10LB datasheet

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DHS180N10LB

DHS180N10L/DHS180N10LF/DHS180N10LI/ DHS180N10LE/DHS180N10LB/DHS180N10LD 47A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 18m DS(on) (TYP) the RoHS standard. 1 3 S I = 47A D 2 Features ... See More ⇒

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DHS180N10LB

DHS180N10LD 100V/15m /50A N-MOSFET Features Key Parameters VDS Low on resistance 100V RDS(on)typ. Low reverse transfer capacitances 15m ID 100% single pulse avalanche energy test 50A Ciss@10V 100% VDS test 1076pF Pb-Free plating / Halogen-Free / RoHS compliant Qgd 2nC Applications Motor Control and Drive Charge/Discharge for Battery Management Sy... See More ⇒

Detailed specifications: DHS110N15D, DHS110N15E, DHS110N15F, DHS130N06B, DHS130N06D, DHS160N100B, DHS160N100D, DHS180N10L, 18N50, DHS180N10LD, DHS180N10LE, DHS180N10LF, DHS180N10LI, DHS250N10D, DHS400N10D, DTE043N04NA, DTG018N04N

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