All MOSFET. DTE043N04NA Datasheet

 

DTE043N04NA Datasheet and Replacement


   Type Designator: DTE043N04NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 163 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 59 nC
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 347 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
   Package: TO263
 

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DTE043N04NA Datasheet (PDF)

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DTE043N04NA

DTG045N04NA&DTE043N04NA120A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 3.8mTo-220DS(on) (TYP)Gstandard.1R = 3.6mTo-263DS(on) (TYP)3 S2 FeaturesI = 120AD

Datasheet: DHS180N10L , DHS180N10LB , DHS180N10LD , DHS180N10LE , DHS180N10LF , DHS180N10LI , DHS250N10D , DHS400N10D , K2611 , DTG018N04N , DTG023N03L , DTG025N04NA , DTG045N04NA , DTG050P06LA , DTJ018N04N , F12N60 , F13N50 .

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