DHS045N88E PDF Specs and Replacement
Type Designator: DHS045N88E
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 145
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 120
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 1225
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
DHS045N88E PDF Specs
..1. Size:1350K cn wxdh
dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf 
DHS045N88/DHS045N88F/DHS045N88I/ DHS045N88E/DHS045N88B/DHS045N88D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
6.1. Size:1350K cn wxdh
dhs045n85 dhs045n85f dhs045n85i dhs045n85e dhs045n85b dhs045n85d.pdf
DHS045N85/DHS045N85F/DHS045N85I/ DHS045N85E/DHS045N85B/DHS045N85D 120A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
7.1. Size:1370K cn wxdh
dhs045n98 dhs045n98f dhs045n98i dhs045n98e dhs045n98b dhs045n98d.pdf
DHS045N98/DHS045N98F/DHS045N98I/ DHS045N98E/DHS045N98B/DHS045N98D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Featur... See More ⇒
9.1. Size:824K cn wxdh
dhs044n12 dhs044n12e.pdf
DHS044N12/DHS044N12E 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.7m DS(on) (TYP) the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gate charge... See More ⇒
9.2. Size:819K cn wxdh
dhs044n12.pdf
DHS044N12 160A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 3.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 160A D 2 Features Low on resistance Low gat... See More ⇒
9.3. Size:1390K cn wxdh
dhs046n10 dhs046n10f dhs046n10i dhs046n10e dhs046n10b dhs046n10d.pdf
DHS046N10/DHS046N10F/DHS046N10I DHS046N10E/DHS046N10B/DHS046N10D 120A 98V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 98V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.6m DS(on) (TYP) the RoHS standard. 1 3 S I = 120A D 2 Feature... See More ⇒
9.4. Size:698K cn wxdh
dhs043n85p.pdf
DHS043N85P 112A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 3.8m DS(on) (TYP) the RoHS standard. 1 3 S I =112A D 2 Features Fast switching Low on resistance Low ga... See More ⇒
9.5. Size:964K cn wxdh
dhs042n15 dhs042n15e.pdf
DHS042N15&DHS042N15E 150A 150V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET V = 150V DSS utilizes advanced Split Gate Trench technology, which 2 D provides excellent Rdson and low Gate charge at the same R = 5.0m TO-220 DS(on) (TYP) time. Which accords with the RoHS standard. G 1 R = 4.8m TO-263 DS(on) (TYP) 3 S ... See More ⇒
9.6. Size:813K cn wxdh
dhs043n07p.pdf
DHS043N07P 100A 70V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 70V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.0m DS(on) (TYP) the RoHS standard. 1 3 S I = 100A D 2 Features Low on resistance Low gate charge Fast... See More ⇒
9.7. Size:792K cn wxdh
dhs042n85p.pdf
DHS042N85P 108A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 4.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 108A D 2 Features Fast switching Low on resistance Low g... See More ⇒
9.8. Size:961K cn wxdh
dhs044n12u.pdf
DHS044N12U 270A 120V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V = 120V DS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.7m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I = 270A D 2 Features Low on resistance Low gate... See More ⇒
Detailed specifications: DTE025N04NA
, DHS031N07P
, DHS035N10
, DHS035N10E
, DHS035N88
, DHS035N88E
, DHS035N88I
, DHS045N88D
, 2SK3878
, DHS045N88F
, DHS045N88I
, DHS045N98
, DHS045N98B
, DHS045N98D
, DHS045N98E
, DHS045N98F
, DHS045N98I
.
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