All MOSFET. DSG041N08NA Datasheet

 

DSG041N08NA Datasheet and Replacement


   Type Designator: DSG041N08NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 923 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm
   Package: TO220
 

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DSG041N08NA Datasheet (PDF)

 ..1. Size:901K  cn wxdh
dsg041n08na.pdf pdf_icon

DSG041N08NA

DSG041N08NA180A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.4mDS(on) (TYP)the RoHS standard.13 SI = 180AD2 Features Fast switching Low on resistance Low g

 9.1. Size:1084K  cn wxdh
dsg047n08n3 dse047n08n3.pdf pdf_icon

DSG041N08NA

DSG047N08N3&DSE047N08N3120A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced splite gate trench technology design, providedR = 3.9mT0-220DS(on) (TYP)excellent Rdson and low gate charge. Which accords withGthe RoHS standard. R = 3.7mT0-263DS(on) (TYP)13 SI = 120AD2 F

 9.2. Size:1037K  cn wxdh
dse043n14n dsg045n14n.pdf pdf_icon

DSG041N08NA

DSE043N14N&DSG045N14N180A 135V N-channel Enhancement Mode Power MOSFET1 Description2 D V =135VDSSThis N-channel enhancement mode power MOSFETutilizes advanced Split Gate Trench technology, whichR =3.7mTO-263DS(on) (TYP)Gprovides excellent Rdson and low Gate charge at the same1R =3.9mTO-220DS(on) (TYP)time. Which accords with the RoHS standard.3 SI

 9.3. Size:835K  cn wxdh
dsg048n08n3.pdf pdf_icon

DSG041N08NA

DSG048N08N3120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.1mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Features Fast switching Low on resistance Low g

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BUZ906DP

Keywords - DSG041N08NA MOSFET datasheet

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