DHS025N88F Datasheet. Specs and Replacement
Type Designator: DHS025N88F 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 118 nS
Cossⓘ - Output Capacitance: 1282 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220F
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DHS025N88F substitution
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DHS025N88F datasheet
dhs025n88 dhs025n88f dhs025n88i dhs025n88e dhs025n88d dhs025n88b.pdf
DHS025N88/DHS025N88F/DHS025N88I DHS025N88E/DHS025N88D/DHS025N88B 205A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.5m DS(on) (TYP) the RoHS standard. 1 3 S I = 205A D 2 Feature... See More ⇒
dhs025n06 dhs025n06e.pdf
DHS025N06/DHS025N06E 180A 60V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =60V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R =2.5 m TO-220 DS(on) (TYP) G the RoHS standard. 1 R =2.2 m TO-263 DS(on) (TYP) 3 S 2 Features I = ... See More ⇒
dhs025n10 dhs025n10e dhs025n10d dhs025n10b.pdf
DHS025N10/DHS025N10E DHS025N10D/DHS025N10B 240A 100V N-channel Enhancement Mode Power MOSFET 1 Description The N-channel enhancement mode power mosfets used 2 D V =100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 2.8m DS(on) (TYP) the RoHS standard. 1 3 S I = 240A D 2 Features Low on resistanc... See More ⇒
dhs025n10u.pdf
DHS025N10U 180A 100V N-channel Enhancement Mode Power MOSFET 1 Description This N-channel enhancement mode power MOSFET 2 D V =100V DSS utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same G R = 2.2m DS(on) (TYP) time. Which accords with the RoHS standard. 1 3 S I =180A D 2 Features Low on resistance Low gate ... See More ⇒
Detailed specifications: DSG059N15NA, DSG070N10L3, DSG070N15NA, DSG108N20NA, DSG140N12N3, DSG270N12N3, DSN108N20N, DHS025N88E, TK10A60D, DHS025N88I, DHS030N88, DHS030N88E, DHS030N88F, DHS030N88I, DHS046N10, DHS046N10B, DHS046N10D
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