DHS046N10B Datasheet and Replacement
Type Designator: DHS046N10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 98 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 76 nS
Cossⓘ - Output Capacitance: 652 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO251
DHS046N10B substitution
DHS046N10B Datasheet (PDF)
dhs046n10 dhs046n10f dhs046n10i dhs046n10e dhs046n10b dhs046n10d.pdf

DHS046N10/DHS046N10F/DHS046N10IDHS046N10E/DHS046N10B/DHS046N10D120A 98V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 98VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Feature
dhs044n12 dhs044n12e.pdf

DHS044N12/DHS044N12E160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 120VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 3.7mDS(on) (TYP)the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gate charge
dhs044n12.pdf

DHS044N12160A 120V N-channel Enhancement Mode Power MOSFET1 DescriptionThis N-channel enhancement mode power MOSFET2 DV = 120VDSSutilizes advanced Split Gate Trench technology, whichprovides excellent Rdson and low Gate charge at the sameGR = 3.7mDS(on) (TYP)time. Which accords with the RoHS standard.13 SI = 160AD2 Features Low on resistance Low gat
dhs045n88 dhs045n88f dhs045n88i dhs045n88e dhs045n88b dhs045n88d.pdf

DHS045N88/DHS045N88F/DHS045N88I/DHS045N88E/DHS045N88B/DHS045N88D120A 85V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 85VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 4.6mDS(on) (TYP)the RoHS standard.13 SI = 120AD2 Featur
Datasheet: DHS025N88E , DHS025N88F , DHS025N88I , DHS030N88 , DHS030N88E , DHS030N88F , DHS030N88I , DHS046N10 , 75N75 , DHS046N10D , DHS046N10E , DHS046N10F , DHS046N10I , DHS051N10P , DHS052N10 , DHS052N10B , DSE026N10N3A .
Keywords - DHS046N10B MOSFET datasheet
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