DHS052N10B Datasheet and Replacement
Type Designator: DHS052N10B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 74 nC
tr ⓘ - Rise Time: 163 nS
Cossⓘ - Output Capacitance: 600 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: TO251
DHS052N10B substitution
DHS052N10B Datasheet (PDF)
dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf

DHS052N10/DHS052N10F/DHS052N10IDHS052N10E/DHS052N10B/DHS052N10D110A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.1mDS(on) (TYP)the RoHS standard.13 SI = 110AD2 Featu
dhs052n10p.pdf

DHS052N10P99A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced splite gate trench technology design, providedexcellent Rdson and low gate charge. Which accords withGR = 5.2mDS(on) (TYP)the RoHS standard.13 SI = 99AD2 Features Fast switching Low on resistance Low g
dhs051n10p.pdf

DHS051N10P108A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced Splite gate technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.0mDS(on) (TYP)G1standard.I = 108A3 S D2 Features Fast switching Low on resistance Low gate ch
dhs055n07b dhs055n07d.pdf

DHS055N07B/DHS055N07D95A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced splite gate trench technology design, provided V =68V2 D DSSexcellent Rdson and low gate charge. Which accords withR = 6.0mDS(on) (TYP)the RoHS standard.G1I = 95AD3 S2 Features Fast switching Low on resistance
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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