All MOSFET. DHS052N10P Equivalents Search

 

DHS052N10P Spec and Replacement


   Type Designator: DHS052N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 99 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 163 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DFN5X6-8L

 DHS052N10P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DHS052N10P Specs

 ..1. Size:777K  cn wxdh
 dhs052n10p.pdf pdf_icon

DHS052N10P

DHS052N10P 99A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.2m DS(on) (TYP) the RoHS standard. 1 3 S I = 99A D 2 Features Fast switching Low on resistance Low g... See More ⇒

 5.1. Size:1375K  cn wxdh
 dhs052n10 dhs052n10f dhs052n10i dhs052n10e dhs052n10b dhs052n10d.pdf pdf_icon

DHS052N10P

DHS052N10/DHS052N10F/DHS052N10I DHS052N10E/DHS052N10B/DHS052N10D 110A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with G R = 5.1m DS(on) (TYP) the RoHS standard. 1 3 S I = 110A D 2 Featu... See More ⇒

 9.1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS052N10P

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch... See More ⇒

 9.2. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS052N10P

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒

SHOW MORE

Detailed specifications: DSE270N12N3 , DSG014N04N , DSG019N04L , DSG024N10N3 , DHS052N10D , DHS052N10E , DHS052N10F , DHS052N10I , EMB04N03H , DHS055N07 , DHS055N07B , DHS055N07D , DHS055N07E , DHS055N85 , DHS055N85B , DHS055N85D , DHS055N85E .

History: DSU007N04NA

Keywords - DHS052N10P MOSFET specs

 DHS052N10P cross reference
 DHS052N10P equivalent finder
 DHS052N10P lookup
 DHS052N10P substitution
 DHS052N10P replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.