DHS055N07 Datasheet. Specs and Replacement

Type Designator: DHS055N07  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77.1 nS

Cossⓘ - Output Capacitance: 466 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

  📄📄 Copy 

DHS055N07 substitution

- MOSFET ⓘ Cross-Reference Search

 

DHS055N07 datasheet

 ..1. Size:859K  cn wxdh
 dhs055n07 dhs055n07e.pdf pdf_icon

DHS055N07

DHS055N07/DHS055N07E 105A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V =68V DSS advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 6.0m TO-220 DS(on) (TYP) the RoHS standard. G 1 R = 5.7m TO-263 DS(on) (TYP) 3 S 2 Features I = 105... See More ⇒

 0.1. Size:875K  cn wxdh
 dhs055n07b dhs055n07d.pdf pdf_icon

DHS055N07

DHS055N07B/DHS055N07D 95A 68V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided V =68V 2 D DSS excellent Rdson and low gate charge. Which accords with R = 6.0m DS(on) (TYP) the RoHS standard. G 1 I = 95A D 3 S 2 Features Fast switching Low on resistance ... See More ⇒

 7.1. Size:1220K  cn wxdh
 dhs055n85 dhs055n85e dhs055n85d dhs055n85b.pdf pdf_icon

DHS055N07

DHS055N85/DHS055N85E /DHS055N85D/DHS055N85B 110A 85V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 85V DS advanced splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R =5.5m DS(on) (TYP) G standard. 1 I = 110A D 3 S 2 Features Fast switching Low... See More ⇒

 9.1. Size:769K  cn wxdh
 dhs051n10p.pdf pdf_icon

DHS055N07

DHS051N10P 108A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced Splite gate technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 5.0m DS(on) (TYP) G 1 standard. I = 108A 3 S D 2 Features Fast switching Low on resistance Low gate ch... See More ⇒

SHOW MORE

Detailed specifications: DSG014N04N, DSG019N04L, DSG024N10N3, DHS052N10D, DHS052N10E, DHS052N10F, DHS052N10I, DHS052N10P, RU7088R, DHS055N07B, DHS055N07D, DHS055N07E, DHS055N85, DHS055N85B, DHS055N85D, DHS055N85E, DHS065N10

Keywords - DHS055N07 MOSFET specs

 DHS055N07 cross reference

 DHS055N07 equivalent finder

 DHS055N07 pdf lookup

 DHS055N07 substitution

 DHS055N07 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.