2SK3203 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3203
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 45 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 300 nS
Drain-Source Capacitance (Cd): 380 pF
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: DPAK
2SK3203 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3203 Datasheet (PDF)
0.1. 2sk3203l 2sk3203s.pdf 
Size:54K _hitachi
2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2
0.2. 2sk3203.pdf Size:58K _hitachi
2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2
8.1. 2sk3205.pdf Size:196K _toshiba
2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -π-MOSV) 2SK3205 Switching Regulator Applications DC-DC Converter, and Unit: mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 150 V)
8.2. rej03g1090 2sk3209ds.pdf Size:66K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. 2sk3209.pdf Size:53K _renesas
2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain
8.4. 2sk319 2sk320.pdf Size:51K _hitachi
Datasheet: 2SK3157 , 2SK3158 , 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , 2SK3177 , IRF540 , 2SK3209 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 , 2SK3233 .
