All MOSFET. DHSJ21N65W Datasheet

 

DHSJ21N65W Datasheet and Replacement


   Type Designator: DHSJ21N65W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 54 nC
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 197 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: TO247
 

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DHSJ21N65W Datasheet (PDF)

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DHSJ21N65W

DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 DV = 650V DSSadvanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP)Gthe RoHS standard. 1I = 21A 3 S D2 Features Fast switching Low on resistance

 5.1. Size:1012K  cn wxdh
dhsj21n65z.pdf pdf_icon

DHSJ21N65W

DHSJ21N65Z16A 650V N-channel Super Junction Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is using advancedV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with the RoHSR = 150mDS(on) (TYP)standard.I = 16 AD2 Features Low on resistance Low gate charge Fast switching Low re

 9.1. Size:1064K  cn wxdh
dhsj25n65f.pdf pdf_icon

DHSJ21N65W

DHSJ25N65F25A 650V N-channel Super Junction Power MOSFET1 DescriptionThis N-channel enhanced vdmosfets, is using advancedV = 650VDSSsuper junction technology and design to provide excellentRdson with low gate charge. Which accords with theR = 110mDS(on) (TYP)RoHS standard.I = 25AD2 Features Fast switching Low on resistance Low gate charge Low reve

Datasheet: DHS065N85D , DHS065N85E , DHS065N85F , DHS065N85I , DHS065N85P , DHSJ11N65 , DHSJ13N65 , DHSJ17N65 , IRF640N , DHSJ21N65Z , DHSJ25N65F , DSE012N04NA , DSE022N10N3 , , , , .

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