DHSJ21N65W Datasheet. Specs and Replacement

Type Designator: DHSJ21N65W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 197 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm

Package: TO247

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DHSJ21N65W datasheet

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DHSJ21N65W

DHSJ21N65W 21A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced VDMOSFETs, is using 2 D V = 650V DSS advanced super junction technology and design to provide excellent Rdson with low gate charge. Which accords with R = 150m DS(on) (TYP) G the RoHS standard. 1 I = 21A 3 S D 2 Features Fast switching Low on resistance ... See More ⇒

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DHSJ21N65W

DHSJ21N65Z 16A 650V N-channel Super Junction Power MOSFET 1 Description These N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the RoHS R = 150m DS(on) (TYP) standard. I = 16 A D 2 Features Low on resistance Low gate charge Fast switching Low re... See More ⇒

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DHSJ21N65W

DHSJ25N65F 25A 650V N-channel Super Junction Power MOSFET 1 Description This N-channel enhanced vdmosfets, is using advanced V = 650V DSS super junction technology and design to provide excellent Rdson with low gate charge. Which accords with the R = 110m DS(on) (TYP) RoHS standard. I = 25A D 2 Features Fast switching Low on resistance Low gate charge Low reve... See More ⇒

Detailed specifications: DHS065N85D, DHS065N85E, DHS065N85F, DHS065N85I, DHS065N85P, DHSJ11N65, DHSJ13N65, DHSJ17N65, IRLZ44N, DHSJ21N65Z, DHSJ25N65F, DSE012N04NA, DSE022N10N3, F4N60, F4N65, F4N70, F50N06

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