All MOSFET. I110N04 Datasheet

 

I110N04 Datasheet and Replacement


   Type Designator: I110N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 117 nC
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 590 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO262
 
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I110N04 Datasheet (PDF)

 ..1. Size:1381K  cn wxdh
 110n04 f110n04 i110n04 e110n04 b110n04 d110n04.pdf pdf_icon

I110N04

110N04/F110N04/I110N04/E110N04/B110N04/D110N04160A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs UsedV = 40VDSSadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theR = 3.5mDS(on) TYP)RoHS standard.I = 160AD2 Features Fast Switching Low ON Resistance(Rdson

 8.1. Size:972K  cn hunteck
 hgd110n08al hgi110n08al.pdf pdf_icon

I110N04

HGD110N08AL , HGI110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness50 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 8.2. Size:983K  cn hunteck
 hgd110n08a hgi110n08a.pdf pdf_icon

I110N04

HGD110N08A , HGI110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 9.1. Size:690K  infineon
 ipb107n20n3-g ipp110n20n3-g ipi110n20n3-g ipb107n20n3g ipp110n20n3g ipi110n20n3g.pdf pdf_icon

I110N04

IPB107N20N3 G IPP110N20N3 GIPI110N20N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V N-channel, normal levelRDS(on),max (TO263) 10.7mW Excellent gate charge x R product (FOM)DS(on)ID 88 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target appl

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Keywords - I110N04 MOSFET datasheet

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 I110N04 equivalent finder
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