I80N06 Datasheet. Specs and Replacement
Type Designator: I80N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 64 nS
Cossⓘ - Output Capacitance: 335 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0084 Ohm
Package: TO262
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I80N06 datasheet
..1. Size:1315K cn wxdh
80n06 f80n06 i80n06 e80n06 b80n06 d80n06.pdf 
80N06/F80N06/I80N06/ E80N06/B80N06/D80N06 80A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS 2 D VDS = 60V Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with R = 7m DS(on) (Type) G the RoHS standard. 1 ID = 80A 3 S 2 Features Fast Switching High avalanche C... See More ⇒
0.1. Size:208K 1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒
0.2. Size:158K infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf
IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l... See More ⇒
0.3. Size:187K infineon
ipi80n06s3-07.pdf
IPB80N06S3-07 IPI80N06S3-07, IPP80N06S3-07 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 6.5 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche... See More ⇒
0.6. Size:174K infineon
ipi80n06s4l-05 ipp80n06s4l-05 ipb80n06s4l-05.pdf
IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested... See More ⇒
0.7. Size:175K infineon
ipi80n06s4-07 ipp80n06s4-07 ipb80n06s4-07.pdf
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T... See More ⇒
0.9. Size:171K infineon
ipb80n06s4-07 ipi80n06s4-07 ipp80n06s4-07.pdf
IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.1 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T... See More ⇒
0.10. Size:419K infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf
SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -... See More ⇒
0.12. Size:170K infineon
ipb80n06s4-05 ipi80n06s4-05 ipp80n06s4-05 ipp80n06s4 ipb80n06s4 ipi80n06s4-05.pdf
IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 5.4 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested T... See More ⇒
0.13. Size:205K infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒
0.14. Size:170K infineon
ipb80n06s4l-05 ipi80n06s4l-05 ipp80n06s4l-05.pdf
IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 4.8 m DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested... See More ⇒
0.15. Size:221K infineon
spi80n06s-80 spp80n06s-08.pdf
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒
0.16. Size:1054K cmos
cmp80n06 cmb80n06 cmi80n06.pdf
CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET BVDSS RDSON ID with extreme high cell density , 60V 7.8m 80A which provide excellent RDSON and gate charge for most of the Applications synchronous buck converter Motor Control applications. DC-DC converters General Purpose Power Amplif... See More ⇒
0.17. Size:630K samwin
swi80n06v1.pdf
SW80N06V1 N-channel Enhanced mode TO-251 MOSFET Features TO-251 BVDSS 60V High ruggedness ID 80A Low RDS(ON) (Typ 6.7m )@VGS=4.5V (Typ 5.5m )@VGS=10V RDS(ON) 6.7m @VGS=4.5V Low Gate Charge (Typ 103nC) 5.5m @VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 3 2 Application Synchronous Rectification, Li Bat... See More ⇒
Detailed specifications: FN6005, I110N04, I20N50, I25N10, I50N06, I630, I640, I740, AON7410, ID120N10ZR, IN6005, N6005, N6005B, N6005D, FBM80N70P, FBM80N70B, FBM85N80P
Keywords - I80N06 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
