All MOSFET. JMSH0602PC Datasheet

 

JMSH0602PC Datasheet and Replacement


   Type Designator: JMSH0602PC
   Marking Code: SH0602P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 179 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.1 V
   |Id| ⓘ - Maximum Drain Current: 178 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 71 nC
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 2176 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: TO220
 

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JMSH0602PC Datasheet (PDF)

 ..1. Size:1272K  jiejie micro
 jmsh0602pc.pdf pdf_icon

JMSH0602PC

60V, 178A, 2.4m N-channel Power SGT MOSFETJMSH0602PCProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 178 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power Manag

 5.1. Size:1293K  jiejie micro
 jmsh0602pk.pdf pdf_icon

JMSH0602PC

60V, 112A, 1.9m N-channel Power SGT MOSFETJMSH0602PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 2.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 112 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power Manag

 5.2. Size:1343K  jiejie micro
 jmsh0602pe.pdf pdf_icon

JMSH0602PC

60V, 218A, 1.9m N-channel Power SGT MOSFETJMSH0602PEProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 218 ARDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power ManagementTO-263 -3LSc

 5.3. Size:644K  jiejie micro
 jmsh0602pg.pdf pdf_icon

JMSH0602PC

JMSH0602PG60V 1.6m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS60 V Low Gate Charge VGS(th)_Typ3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mWApplications Power Management in Computing, CE, IE 4.0, Communications Current Switching in

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