All MOSFET. 2SK3209 Datasheet

 

2SK3209 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3209

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 180 nS

Drain-Source Capacitance (Cd): 820 pF

Maximum Drain-Source On-State Resistance (Rds): 0.045 Ohm

Package: TO220FM

2SK3209 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3209 Datasheet (PDF)

0.1. rej03g1090 2sk3209ds.pdf Size:66K _renesas

2SK3209
2SK3209

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.2. 2sk3209.pdf Size:53K _renesas

2SK3209
2SK3209

2SK3209 Silicon N Channel MOS FET High Speed Power Switching REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.3.00 Sep 07, 2005 Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain

 8.1. 2sk3205.pdf Size:196K _toshiba

2SK3209
2SK3209

2SK3205 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -π-MOSV) 2SK3205 Switching Regulator Applications DC-DC Converter, and Unit: mm Motor Drive Applications 4 V gate drive Low drain-source ON resistance : RDS (ON) = 0.36 Ω (typ.) High forward transfer admittance : |Yfs| = 4.5 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 150 V)

8.2. 2sk319 2sk320.pdf Size:51K _hitachi

2SK3209



 8.3. 2sk3203l 2sk3203s.pdf Size:54K _hitachi

2SK3209
2SK3209

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

8.4. 2sk3203.pdf Size:58K _hitachi

2SK3209
2SK3209

2SK3203(L), 2SK3203(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-1384A (Z) 2nd. Edition Jan. 2001 Features • Low on-resistance RDS(on) =11m typ. • Low drive current • 5V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 2 3 1 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3203(L), 2SK3203(S) Absolute Maximum Ratings (Ta = 2

Datasheet: 2SK3158 , 2SK3159 , 2SK3160 , 2SK3161 , 2SK3162 , 2SK3163 , 2SK3177 , 2SK3203 , IRF840 , 2SK3210 , 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 , 2SK3233 , 2SK3234 .

 

 
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