All MOSFET. HUFA76407DK8TF085 Datasheet

 

HUFA76407DK8TF085 Datasheet and Replacement


   Type Designator: HUFA76407DK8TF085
   Marking Code: 76407DK8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 3.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.4 nC
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: MS-012AA
 

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HUFA76407DK8TF085 Datasheet (PDF)

 1.1. Size:543K  fairchild semi
 hufa76407dk8t f085.pdf pdf_icon

HUFA76407DK8TF085

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

 1.2. Size:263K  fairchild semi
 hufa76407dk8t.pdf pdf_icon

HUFA76407DK8TF085

HUFA76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedan

 4.1. Size:150K  fairchild semi
 hufa76407d3st hufa76407d3 hufa76407d3s.pdf pdf_icon

HUFA76407DK8TF085

HUFA76407D3, HUFA76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATESOURCE Simulation Models- Temperature Compensated PSPICE a

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