All MOSFET. JMSL0303TG Datasheet

 

JMSL0303TG Datasheet and Replacement


   Type Designator: JMSL0303TG
   Marking Code: SL0303T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id| ⓘ - Maximum Drain Current: 162 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 36 nC
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 2238 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: PDFN5X6-8L
 

 JMSL0303TG substitution

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JMSL0303TG Datasheet (PDF)

 ..1. Size:1281K  jiejie micro
 jmsl0303tg.pdf pdf_icon

JMSL0303TG

30V, 162A, 2.5m N-channel Power SGT MOSFETJMSL0303TGProduct SummaryFeatures Excellent RDS(ON) and Low Gate Charge ParametersValue UnitVDSS 30 V 100% UIS TestedVGS(th)_Typ 1.6 V 100% Vds TestedID(@VGS=10V) 162 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 1.8 mWRDS(ON)_Typ(@VGS=4.5V 2.5 mWApplications Load Switch PWM Application Pow

 5.1. Size:1234K  jiejie micro
 jmsl0303tu.pdf pdf_icon

JMSL0303TG

30V, 88A, 2.7m N-channel Power SGT MOSFETJMSL0303TUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 30 V 100% Vds TestedVGS(th)_Typ 1.6 V Halogen-free; RoHS-compliantID(@VGS=10V) 88 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mWRDS(ON)_Typ(@VGS=4.5V 2.7 mWApplications Load Switch PWM Ap

 6.1. Size:335K  jiejie micro
 jmsl0303au.pdf pdf_icon

JMSL0303TG

JMSL0303AU30V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 119 A RDS(ON)_Typ (@ VGS = 10V)1.8 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)2.7 m Halogen-free and RoHS-compliantApplications Powe

 6.2. Size:297K  jiejie micro
 jmsl0303ag.pdf pdf_icon

JMSL0303TG

JMSL0303AG30V 1.7m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS30 V Low Gate Charge VGS(th)_Typ1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 136 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0,

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History: NTB60N06 | IXFN180N07

Keywords - JMSL0303TG MOSFET datasheet

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