All MOSFET. HUFA76413DK8TF085 Datasheet

 

HUFA76413DK8TF085 Datasheet and Replacement


   Type Designator: HUFA76413DK8TF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 5.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.049 Ohm
   Package: SO-8
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HUFA76413DK8TF085 Datasheet (PDF)

 1.1. Size:617K  fairchild semi
 hufa76413dk8t f085.pdf pdf_icon

HUFA76413DK8TF085

October 2010HUFA76413DK8T_F085N-Channel Logic Level UltraFET Power MOSFET60V, 4.8A, 56mGeneral DescriptionThese N-Channel power MOSFETs are manufactured us-Applicationsing the innovative UltraFET process. This advanced pro- Motor and Load Controlcess technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding perfor- Powertr

 4.1. Size:204K  fairchild semi
 hufa76413d3 hufa76413d3s.pdf pdf_icon

HUFA76413DK8TF085

HUFA76413D3, HUFA76413D3SData Sheet December 200120A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN DRAINSOURCE- rDS(ON) = 0.049, VGS = 10V (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.056, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE a

 5.1. Size:206K  fairchild semi
 hufa76413p3.pdf pdf_icon

HUFA76413DK8TF085

HUFA76413P3Data Sheet December 200122A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeaturesSOURCE Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.049, VGS = 10VGATE- rDS(ON) = 0.056, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE)- Spice and SABER Thermal

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Keywords - HUFA76413DK8TF085 MOSFET datasheet

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