JMPL1050AY MOSFET Datasheet: P-Ch, 100V, 9.7A. Full specification with pinout and replacement list

JMPL1050AY Specs and Replacement

Type Designator: JMPL1050AY

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 10.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 222 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT223

JMPL1050AY substitution

- MOSFET ⓘ Cross-Reference Search

JMPL1050AY datasheet

..1. Size:355K jiejie micro
jmpl1050ay.pdf pdf_icon

JMPL1050AY -100V 40m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -10 A RDS(ON)_Typ (@ VGS = -10V) 40 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V) 53 m 100% UIS Tested, 100%... See More ⇒

5.1. Size:356K jiejie micro
jmpl1050ak.pdf pdf_icon

JMPL1050AK -100V 37m P-Ch Power MOSFET Product Summary Features Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -30 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 37 m RDS(ON)_Typ (@ VGS = -4.5V) 50 m 100% UIS Tested, 100% ... See More ⇒

5.2. Size:376K jiejie micro
jmpl1050ap.pdf pdf_icon

JMPL1050AP -100V 39m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.3 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 39 m RDS(ON)_Typ (@ VGS = -4.5V) 57 m 100% UIS Tested, 100% ... See More ⇒

5.3. Size:348K jiejie micro
jmpl1050akq.pdf pdf_icon

JMPL1050AKQ -100V 37m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -36 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V) 37 m RDS(ON)_Typ (@ VGS = -4.5V) 50 m Halogen-free and RoHS-... See More ⇒