JMSH2010BTL MOSFET Datasheet: N-Ch, 200V, 118A. Full specification with pinout and replacement list

JMSH2010BTL Specs and Replacement

Type Designator: JMSH2010BTL

Marking Code: SH2010B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 118 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V

Qg ⓘ - Total Gate Charge: 48 nC

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 436 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm

Package: TOLL

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JMSH2010BTL datasheet

..1. Size:387K jiejie micro
jmsh2010btl.pdf pdf_icon

JMSH2010BTL 200V 8.0m TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 118 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.0 m Halogen-free and RoHS-compliant Applications Power Management in Compu... See More ⇒

5.1. Size:375K jiejie micro
jmsh2010bc jmsh2010be.pdf pdf_icon

JMSH2010BC JMSH2010BE 200V 9.1m N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 129 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 9.1 m Halogen-free and RoHS-compliant Applications Power Management ... See More ⇒

5.2. Size:539K jiejie micro
jmsh2010bs.pdf pdf_icon

JMSH2010BS 200V 8.8mW N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 200 V Low Gate Charge, Qg VGS(th)_Typ 3.3 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 130 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.8 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, ... See More ⇒

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jmsh2010pe.pdf pdf_icon

200V, 109A, 9.1m N-channel Power SGT MOSFET JMSH2010PE Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 200 V 100% Vds Tested VGS(th)_Typ 3.1 V Halogen-free; RoHS-compliant ID(@VGS=10V) 109 A RDS(ON)_Typ(@VGS=10V 9.1 mW Applications Load Switch PWM Application Power Management D G S TO... See More ⇒