All MOSFET. HUFA76429D3STF085 Datasheet

 

HUFA76429D3STF085 Datasheet and Replacement


   Type Designator: HUFA76429D3STF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO252 DPAK
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HUFA76429D3STF085 Datasheet (PDF)

 1.1. Size:144K  fairchild semi
 hufa76429d3s hufa76429d3st.pdf pdf_icon

HUFA76429D3STF085

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 1.2. Size:372K  onsemi
 hufa76429d3st-f085.pdf pdf_icon

HUFA76429D3STF085

HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Impedance ModelsSOURCE- ww

 3.1. Size:229K  fairchild semi
 hufa76429d3.pdf pdf_icon

HUFA76429D3STF085

HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

 3.2. Size:638K  onsemi
 hufa76429d3.pdf pdf_icon

HUFA76429D3STF085

HUFA76429D3Data Sheet October 2013N-Channel Logic Level UltraFET Power MOSFET60 V, 20 A, 27 mPackagingFeaturesJEDEC TO-251AA Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 10VSOURCE- rDS(ON) = 0.027, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectriecal ModelsDRAIN - Spice and SABER Thermal Impedance Models

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Datasheet: HUFA75344S3 , HUFA75639S3S , FDD86110 , HUFA76407DK8TF085 , HUFA76409D3ST , HUFA76413DK8TF085 , HUFA76419D3S , HUFA76429D3 , 4N60 , HUFA76645S3STF085 , FDMS8018 , MTP3055VL , NDC7001C , FDMB2307NZ , NDS331N , RFD14N05SM9A , SI3443DV .

History: TMU3N90 | ME2301DC-G | RSD200N05 | WSD3042DN56 | IXTB30N100L | STD5407NT4G | SGSP382

Keywords - HUFA76429D3STF085 MOSFET datasheet

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