JBE083NS Datasheet. Specs and Replacement
Type Designator: JBE083NS 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 252.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 133 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 1565 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
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JBE083NS datasheet
jbe083ns.pdf
80V, 133A, 5.8m N-channel Power SGT MOSFET JBE083NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 133 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Managem... See More ⇒
jbe083m.pdf
80V, 199A, 2.7m N-channel Power SGT MOSFET JBE083M Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-263-... See More ⇒
Detailed specifications: JMH65R980ACFP, JMH65R980AF, JMH65R980AK, JMH65R980AKQ, JMH65R980APLN, JMH70R430AF, JMH70R430AK, JBE083M, 7N60, JBE084M, JMSH0803AGS, JMSH0803MC, JMSH0803ME, JMSH0803MG, JMSH0803MTL, JMSH0803NGS, JMSH0803PC
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