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JBE083NS Spec and Replacement


   Type Designator: JBE083NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 252.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 133 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 1565 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263

 JBE083NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JBE083NS Specs

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JBE083NS

80V, 133A, 5.8m N-channel Power SGT MOSFET JBE083NS Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 80 V 100% Vds TESTED VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 133 A Pb-free plating RDS(ON)_Typ(@VGS=10V 5.8 mW Applications Load Switch PWM Application Power Managem... See More ⇒

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JBE083NS

80V, 199A, 2.7m N-channel Power SGT MOSFET JBE083M Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 80 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 199 A RDS(ON)_Typ(@VGS=10V 2.7 mW Applications Load Switch PWM Application Power Management D G S TO-263-... See More ⇒

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JBE083NS

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Detailed specifications: JMH65R980ACFP , JMH65R980AF , JMH65R980AK , JMH65R980AKQ , JMH65R980APLN , JMH70R430AF , JMH70R430AK , JBE083M , 7N60 , JBE084M , JMSH0803AGS , JMSH0803MC , JMSH0803ME , JMSH0803MG , JMSH0803MTL , JMSH0803NGS , JMSH0803PC .

History: PMZ950UPEL

Keywords - JBE083NS MOSFET specs

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