FDMA905P Datasheet. Specs and Replacement
Type Designator: FDMA905P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: MLP2X2
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FDMA905P substitution
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FDMA905P datasheet
fdma905p.pdf
June 2014 FDMA905P Single P-Channel PowerTrench MOSFET -12 V, -10 A, 16 m Features General Description Max rDS(on) = 16 m at VGS = -4.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 21 m at VGS = -2.5 V, ID = -8.9 A applications. It features a MOSFET with low on-state resista... See More ⇒
fdma905.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd FDMA905 NCE P-Channel Enhancement Mode Power MOSFET Description D The FDMA905 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic... See More ⇒
fdma908pz.pdf
February 2014 FDMA908PZ Single P-Channel PowerTrench MOSFET -12 V, -12 A, 12.5 m Features Max rDS(on) = 12.5 m at VGS = -4.5 V, ID = -12 A General Description Max rDS(on) = 18 m at VGS = -2.5 V, ID = -10 A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 28 m at VGS = -1.8 V,... See More ⇒
Detailed specifications: FDMS8018, MTP3055VL, NDC7001C, FDMB2307NZ, NDS331N, RFD14N05SM9A, SI3443DV, SI4532DY, STP80NF70, FDME905PT, SI4542DY, FDC8886, FCP190N60, SSN1N45B, DMG1012T, DMG1012UW, DMG1024UV
Keywords - FDMA905P MOSFET specs
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History: QM03N65D
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