All MOSFET. JMSH1001ATLQ Datasheet

 

JMSH1001ATLQ Datasheet and Replacement


   Type Designator: JMSH1001ATLQ
   Marking Code: SH1001A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 750 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id| ⓘ - Maximum Drain Current: 479 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 155 nC
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 2091 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: TOLL
 

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JMSH1001ATLQ Datasheet (PDF)

 ..1. Size:622K  jiejie micro
 jmsh1001atlq.pdf pdf_icon

JMSH1001ATLQ

JMSH1001ATLQ100V 1.3mW TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 479 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicat

 3.1. Size:325K  jiejie micro
 jmsh1001atl.pdf pdf_icon

JMSH1001ATLQ

JMSH1001ATL100V 1.3m TOLL N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 411 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.3 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indust

 5.1. Size:305K  jiejie micro
 jmsh1001ae7.pdf pdf_icon

JMSH1001ATLQ

JMSH1001AE7100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 290 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial

 5.2. Size:350K  jiejie micro
 jmsh1001ae7q.pdf pdf_icon

JMSH1001ATLQ

JMSH1001AE7Q100V 1.6m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applica

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Datasheet: JMPK4N60BJ , JMPK4N65BJ , JMPK5N50BJ , JMPK630BJ , JMPK7N65BJ , JMSH1001AE7 , JMSH1001AE7Q , JMSH1001ATL , 2N7002 , JMSH1001BTL , JMSH1001MTL , JMSH1001NC , JMSH1001NE , JMSH1001NE7 , JMSH1001NS , JMSH1001NTL , JMSH1001NTLQ .

Keywords - JMSH1001ATLQ MOSFET datasheet

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