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JMSH1001NTLQ Spec and Replacement


   Type Designator: JMSH1001NTLQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 312 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 1764 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TOLL

 JMSH1001NTLQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMSH1001NTLQ Specs

 ..1. Size:1257K  jiejie micro
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JMSH1001NTLQ

100V, 312A, 1.7m N-channel Power SGT MOSFET JMSH1001NTLQ Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameters Value Unit Low Gate Charge VDSS 100 V 100% UIS Tested VGS(th)_Typ 2.9 V 100% Vds Tested ID(@VGS=10V) 312 A Halogen-free; RoHS-compliant RDS(ON)_Typ(@VGS=10V 1.7 mW AEC-Q101 Qualified Applications Load Switch PWM Appli... See More ⇒

 3.1. Size:1183K  jiejie micro
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JMSH1001NTLQ

100V, 400A, 1.4m N-channel Power SGT MOSFET JMSH1001NTL Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 2.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 400 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management PowerJE 10... See More ⇒

 5.1. Size:1182K  jiejie micro
 jmsh1001ne7.pdf pdf_icon

JMSH1001NTLQ

100V, 300A, 1.4m N-channel Power SGT MOSFET JMSH1001NE7 Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 100 V 100% Vds Tested VGS(th)_Typ 3.0 V Halogen-free; RoHS-compliant ID(@VGS=10V) 300 A RDS(ON)_Typ(@VGS=10V 1.4 mW Applications Load Switch PWM Application Power Management TO-263 -7L ... See More ⇒

 5.2. Size:365K  jiejie micro
 jmsh1001nc jmsh1001ne.pdf pdf_icon

JMSH1001NTLQ

JMSH1001NC JMSH1001NE 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 353 A RDS(ON)_Typ (@ VGS = 10V) 1.6 m Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, ... See More ⇒

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Detailed specifications: JMSH1001ATLQ , JMSH1001BTL , JMSH1001MTL , JMSH1001NC , JMSH1001NE , JMSH1001NE7 , JMSH1001NS , JMSH1001NTL , IRF3205 , JMSH1001PTL , JMSH1513AC , JMSH1513AE , JMSH1513AG , JMSH1516AC , JMSH1516AE , JMSH1516AEQ , JMSH1516AG .

History: HGD029NE4SL | HGD035N08A

Keywords - JMSH1001NTLQ MOSFET specs

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