JMPC840BJ Datasheet. Specs and Replacement
Type Designator: JMPC840BJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 114 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 113 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220
JMPC840BJ substitution
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JMPC840BJ datasheet
jmpc840bj.pdf
JMPC840BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 500V, 9A Load Switch RDS(ON) ... See More ⇒
jmpc8n60bj.pdf
JMPC8N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 8A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: JMH65R430APLN, JMPC34N20BJ, JMPC4N60BJ, JMPC4N65BJ, JMPC52N20BJ, JMPC5N50BJ, JMPC630BJ, JMPC7N65BJ, RFP50N06, JMPC8N60BJ, JMSH1004AC, JMSH1004AE, JMSH1004AEQ, JMSH1004BC, JMSH1004BE, JMSH1004BEQ, JMSH1004BG
Keywords - JMPC840BJ MOSFET specs
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