All MOSFET. JMSH1004BEQ Datasheet

 

JMSH1004BEQ Datasheet and Replacement


   Type Designator: JMSH1004BEQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 231 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 905 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO263
 

 JMSH1004BEQ substitution

   - MOSFET ⓘ Cross-Reference Search

 

JMSH1004BEQ Datasheet (PDF)

 ..1. Size:335K  jiejie micro
jmsh1004beq.pdf pdf_icon

JMSH1004BEQ

JMSH1004BEQ100V 3.5m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultralow ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V)3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati

 4.1. Size:956K  jiejie micro
jmsh1004bc jmsh1004be.pdf pdf_icon

JMSH1004BEQ

JMSH1004BCJMSH1004BE100V 3.7mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE

 5.1. Size:311K  jiejie micro
jmsh1004bgq.pdf pdf_icon

JMSH1004BEQ

JMSH1004BGQ100V 3.3m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V)3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application

 5.2. Size:448K  jiejie micro
jmsh1004bg.pdf pdf_icon

JMSH1004BEQ

JMSH1004BG100V 3.3mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V)3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Auto

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , 7N65 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - JMSH1004BEQ MOSFET datasheet

 JMSH1004BEQ cross reference
 JMSH1004BEQ equivalent finder
 JMSH1004BEQ lookup
 JMSH1004BEQ substitution
 JMSH1004BEQ replacement

 

 
Back to Top

 


 
.