JMSH1004BEQ Datasheet. Specs and Replacement

Type Designator: JMSH1004BEQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 231 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 905 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm

Package: TO263

JMSH1004BEQ substitution

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JMSH1004BEQ datasheet

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JMSH1004BEQ

JMSH1004BEQ 100V 3.5m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 160 A RDS(ON)_Typ (@ VGS = 10V) 3.5 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applicati... See More ⇒

 4.1. Size:956K  jiejie micro
jmsh1004bc jmsh1004be.pdf pdf_icon

JMSH1004BEQ

JMSH1004BC JMSH1004BE 100V 3.7mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 134 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3.7 mW Halogen-free and RoHS-compliant Applications Power Management in Computing, CE, IE... See More ⇒

 5.1. Size:311K  jiejie micro
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JMSH1004BEQ

JMSH1004BGQ 100V 3.3m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 138 A RDS(ON)_Typ (@ VGS = 10V) 3.3 m Pb-free Lead Plating Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application... See More ⇒

 5.2. Size:448K  jiejie micro
jmsh1004bg.pdf pdf_icon

JMSH1004BEQ

JMSH1004BG 100V 3.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 112 A RDS(ON)_Typ (@ VGS = 10V) 3.3 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Industrial Auto... See More ⇒

Detailed specifications: JMPC7N65BJ, JMPC840BJ, JMPC8N60BJ, JMSH1004AC, JMSH1004AE, JMSH1004AEQ, JMSH1004BC, JMSH1004BE, STF13NM60N, JMSH1004BG, JMSH1004BGQ, JMSH1004BGWQ, JMSH1004MC, JMSH1004NC, JMSH1004NE, JMSH1004NG, JMSH1004RG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.