All MOSFET. JMSH0402BGQ Datasheet

 

JMSH0402BGQ Datasheet and Replacement


   Type Designator: JMSH0402BGQ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 166 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1922 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: PDFN5X6-8L
 

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JMSH0402BGQ Datasheet (PDF)

 ..1. Size:332K  jiejie micro
 jmsh0402bgq.pdf pdf_icon

JMSH0402BGQ

JMSH0402BGQ40V 2.0m N-Ch Power MOSFETFeaturesProduct Summary Ultra-low ON-resistance, RDS(ON)Parameter Typ. Unit VDS40 V Low Gate Charge, Qg VGS(th)2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 166 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-

 6.1. Size:353K  jiejie micro
 jmsh0402akq.pdf pdf_icon

JMSH0402BGQ

JMSH0402AKQ40V 2.0m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 170 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.0 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.2. Size:335K  jiejie micro
 jmsh0402aeq.pdf pdf_icon

JMSH0402BGQ

JMSH0402AEQ40V 1.3m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 253 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 1.3 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications TO-263-3L

 6.3. Size:569K  jiejie micro
 jmsh0402agq.pdf pdf_icon

JMSH0402BGQ

JMSH0402AGQ40V 1.6mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 182 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN

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Datasheet: JMSH1004MC , JMSH1004NC , JMSH1004NE , JMSH1004NG , JMSH1004RG , JMSH0402AEQ , JMSH0402AGQ , JMSH0402AKQ , IRFZ46N , JMSH0402PG , JMSH0403AG , JMSH0403AGHWQ , JMSH0403AGQ , JMSH0403BG , JMSH0403BGQ , JMSH0403PG , JMSH0403PGHW .

History: ATP304 | IRLR2908TR | JMSH2010PE | 2SK1719 | IRLR3636TRPBF | SM2205PSQG

Keywords - JMSH0402BGQ MOSFET datasheet

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