JMSH0403BG Datasheet and Replacement

JMSH0403BG40V 2.2m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 139 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.2 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE,

40V, 131A, 3.0m N-channel Power SGT MOSFETJMSH0403PGHWProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 131 ARDS(ON)_Typ(@VGS=10V 3.0 mWApplications Load Switch PWM Application Power ManagementPDFN5X6-8L-H

40V, 143A, 2.5m N-channel Power SGT MOSFETJMSH0403PGQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 143 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 2.5 mW AEC-Q101 QualifiedApplications Load Switch PWM Applicat

40V, 75A, 2.4m N-channel Power SGT MOSFETJMSH0403PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 75 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.4 mWApplications Load Switch PWM Application Power Managem

40V, 140A, 3.0m N-channel Power SGT MOSFETJMSH0403PGHWQProduct SummaryFeatures Ultra-low ON-resistance, RDS(ON)ParametersValue Unit Low Gate ChargeVDSS 40 V 100% UIS TestedVGS(th)_Typ 3.1 V 100% Vds TestedID(@VGS=10V) 140 A Halogen-free; RoHS-compliantRDS(ON)_Typ(@VGS=10V 3.0 mW AEC-Q101 QualifiedApplications Load Switch PWM Applic

40V, 135A, 2.6m N-channel Power SGT MOSFETJMSH0403PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 3.1 V Halogen-free; RoHS-compliantID(@VGS=10V) 135 ARDS(ON)_Typ(@VGS=10V 2.6 mWApplications Load Switch PWM Application Power ManagementDG SPDFN

JMSH0403AG40V 2.7m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 117 A Pb-free Lead Plating RDS(ON) (@ VGS = 10V)2.7 m Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communicat

JMSH0403AGHWQ40V 2.7m Half-Bridge N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit 100% UIS Tested, 100% Rg Tested VDS40 V Pb-free Lead Plating VGS(th)_Typ2.8 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 111 A RDS(ON)_Typ (@ VGS = 10V) AEC-Q101 Qualified for Automotive Applications 2.7 m Enhanced routing to reduce PCB layo

JMSH0403AGQ40V 2.7mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 121 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 2.7 mW Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications PDFN5x6-8LPin Conf