JMSH1002AS Datasheet. Specs and Replacement

Type Designator: JMSH1002AS  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 366 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 314 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 2091 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO247

JMSH1002AS substitution

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JMSH1002AS datasheet

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JMSH1002AS

JMSH1002AS 100V 1.7mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.7 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Indus... See More ⇒

 0.1. Size:355K  jiejie micro
jmsh1002asq.pdf pdf_icon

JMSH1002AS

JMSH1002ASQ 100V 1.8m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V) 1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application... See More ⇒

 5.1. Size:339K  jiejie micro
jmsh1002aeq.pdf pdf_icon

JMSH1002AS

JMSH1002AEQ 100V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications ... See More ⇒

 5.2. Size:657K  jiejie micro
jmsh1002ac jmsh1002ae.pdf pdf_icon

JMSH1002AS

JMSH1002AC JMSH1002AE 100V 1.6mW N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliant Applications Power Managerment in Telecom., Ind... See More ⇒

Detailed specifications: JMSH0403PG, JMSH0403PGHW, JMSH0403PGHWQ, JMSH0403PGQ, JMSH0403PU, JMSH1002AC, JMSH1002AE, JMSH1002AEQ, IRF730, JMSH1002ASQ, JMSH1002BC, JMSH1002BE, JMSH1002NC, JMSH1002NE, JMSH1002NS, JMSH1002NTL, JMSH1002RE

Keywords - JMSH1002AS MOSFET specs

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