All MOSFET. JMSH1002BE Datasheet

 

JMSH1002BE Datasheet and Replacement


   Type Designator: JMSH1002BE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 313 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 258 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1512 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO263
 
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JMSH1002BE Datasheet (PDF)

 ..1. Size:341K  jiejie micro
jmsh1002bc jmsh1002be.pdf pdf_icon

JMSH1002BE

JMSH1002BCJMSH1002BE100V 2.1m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., I

 6.1. Size:1251K  jiejie micro
jmsh1002ytl.pdf pdf_icon

JMSH1002BE

100V, 215A, 2.3m N-channel Power SGT MOSFETJMSH1002YTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 215 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Ma

 6.2. Size:339K  jiejie micro
jmsh1002aeq.pdf pdf_icon

JMSH1002BE

JMSH1002AEQ100V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications

 6.3. Size:1077K  jiejie micro
jmsh1002tc jmsh1002te.pdf pdf_icon

JMSH1002BE

JMSH1002TCJMSH1002TE100V 2.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS

Datasheet: JMSH0403PGQ , JMSH0403PU , JMSH1002AC , JMSH1002AE , JMSH1002AEQ , JMSH1002AS , JMSH1002ASQ , JMSH1002BC , IRF740 , JMSH1002NC , JMSH1002NE , JMSH1002NS , JMSH1002NTL , JMSH1002RE , JMSH1002TC , JMSH1002TE , JMSH1002TTL .

History: STU624S

Keywords - JMSH1002BE MOSFET datasheet

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