JMSH1002YE Datasheet and Replacement
Type Designator: JMSH1002YE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 175
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 32
nS
Cossⓘ -
Output Capacitance: 1067
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
JMSH1002YE Datasheet (PDF)
..1. Size:1075K jiejie micro
jmsh1002yc jmsh1002ye.pdf 
JMSH1002YCJMSH1002YE100V 3.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 175 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS
5.1. Size:1251K jiejie micro
jmsh1002ytl.pdf
100V, 215A, 2.3m N-channel Power SGT MOSFETJMSH1002YTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 215 A Pb-free platingRDS(ON)_Typ(@VGS=10V 2.3 mWApplications Load Switch PWM Application Power Ma
6.1. Size:339K jiejie micro
jmsh1002aeq.pdf
JMSH1002AEQ100V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 350 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
6.2. Size:1077K jiejie micro
jmsh1002tc jmsh1002te.pdf
JMSH1002TCJMSH1002TE100V 2.1mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 193 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS
6.3. Size:396K jiejie micro
jmsh1002nc jmsh1002ne.pdf
JMSH1002NCJMSH1002NE100V 2.2m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 284 A RDS(ON) (@ VGS = 10V)2.2 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicl
6.4. Size:657K jiejie micro
jmsh1002ac jmsh1002ae.pdf
JMSH1002ACJMSH1002AE100V 1.6mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 271 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Ind
6.5. Size:1202K jiejie micro
jmsh1002ns.pdf
100V, 274A, 3.2m N-channel Power SGT MOSFETJMSH1002NSProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 274 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power Man
6.6. Size:341K jiejie micro
jmsh1002bc jmsh1002be.pdf
JMSH1002BCJMSH1002BE100V 2.1m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 258 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)2.1 m Halogen-free and RoHS-compliantApplications Power Management in Telecom., I
6.7. Size:1155K jiejie micro
jmsh1002re.pdf
100V, 241A, 2.2m N-channel Power SGT MOSFETJMSH1002REProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TESTEDVDSS 100 V 100% Vds TESTEDVGS(th)_Typ 3.2 V Halogen-free; RoHS-compliantID(@VGS=10V) 241 A Pb-free plating RDS(ON)_Typ(@VGS=10V) 2.2 mWApplications Load Switch PWM Application Power Mana
6.8. Size:623K jiejie micro
jmsh1002as.pdf
JMSH1002AS100V 1.7mW N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 314 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.7 mW Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Indus
6.9. Size:355K jiejie micro
jmsh1002asq.pdf
JMSH1002ASQ100V 1.8m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ2.7 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 333 A RDS(ON)_Typ (@ VGS = 10V)1.8 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Application
6.10. Size:1261K jiejie micro
jmsh1002ttl.pdf
100V, 280A, 1.6m N-channel Power SGT MOSFETJMSH1002TTLProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 100 V 100% Vds TestedVGS(th)_Typ 3.0 V Halogen-free; RoHS-compliantID(@VGS=10V) 280 ARDS(ON)_Typ(@VGS=10V 1.6 mWApplications Load Switch PWM Application Power ManagementPowerJE10
6.11. Size:367K jiejie micro
jmsh1002ntl.pdf
JMSH1002NTL100V 2.0m N-Ch Power MOSFETFeaturesProduct SummaryParameter Value Unit Ultra-low RDS(ON) VDS100 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 337 A RDS(ON) (@ VGS = 10V)2.0 m Pb-free Lead Plating Halogen-free and RoHS-compliantApplications Motor Driving in Power Tool, E-vehicle, Robotics
Datasheet: JMSH1002NE
, JMSH1002NS
, JMSH1002NTL
, JMSH1002RE
, JMSH1002TC
, JMSH1002TE
, JMSH1002TTL
, JMSH1002YC
, IRFP260N
, JMSH1002YTL
, , , , , , , .
Keywords - JMSH1002YE MOSFET datasheet
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