All MOSFET. JMSL0402AK Datasheet

 

JMSL0402AK Datasheet and Replacement


   Type Designator: JMSL0402AK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 1993 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO252
 

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JMSL0402AK Datasheet (PDF)

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JMSL0402AK

JMSL0402AK40V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power

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JMSL0402AK

JMSL0402AKQ40V 1.9m N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 211 A RDS(ON) (@ VGS = 10V)1.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V)2.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automot

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JMSL0402AK

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JMSL0402AK

JMSL0402AGQ40V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q

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Datasheet: JMSH1010PU , JMSH0406PU , JMSH0406PUQ , JMSH0406BUQ , JMSL0401PG , JMSL0401PGQ , JMSL0402AG , JMSL0402AGQ , TK10A60D , JMSL0402AKQ , JMSL0402AU , JMSL0402BG , JMSL0402BGQ , JMSL0402MGQ , JMSL0402MTL , JMSL0402PG , JMSL0402PTL .

History: MIC94052BC6TR | 2SK844 | DG4N60 | SM6166NHKP | STW6N120K3

Keywords - JMSL0402AK MOSFET datasheet

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