JMSL0402AK Datasheet. Specs and Replacement

Type Designator: JMSL0402AK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1993 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm

Package: TO252

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JMSL0402AK datasheet

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JMSL0402AK

JMSL0402AK 40V 1.8m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant Applications Power... See More ⇒

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JMSL0402AK

JMSL0402AKQ 40V 1.9m N-Ch Power MOSFET Features Product Summary Parameter Typ. Unit Ultra-low RDS(ON) VDS 40 V Low Gate Charge VGS(th) 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 211 A RDS(ON) (@ VGS = 10V) 1.9 Pb-free Lead Plating m RDS(ON) (@ VGS = 4.5V) 2.6 m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automot... See More ⇒

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JMSL0402AK

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JMSL0402AK

JMSL0402AGQ 40V 1.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 40 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.6 m RDS(ON)_Typ (@ VGS = 4.5V) 2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q... See More ⇒

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Detailed specifications: JMSH1010PU, JMSH0406PU, JMSH0406PUQ, JMSH0406BUQ, JMSL0401PG, JMSL0401PGQ, JMSL0402AG, JMSL0402AGQ, TK10A60D, JMSL0402AKQ, JMSL0402AU, JMSL0402BG, JMSL0402BGQ, JMSL0402MGQ, JMSL0402MTL, JMSL0402PG, JMSL0402PTL

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