JMSL0402AU Datasheet and Replacement
Type Designator: JMSL0402AU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 119 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.7 nS
Cossⓘ - Output Capacitance: 1538 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: PDFN3X3-8L
JMSL0402AU substitution
JMSL0402AU Datasheet (PDF)
jmsl0402ak.pdf

JMSL0402AK40V 1.8m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Ultra-low RDS(ON) VDS40 V Low Gate Charge VGS(th)_Typ1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 150 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.8 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliantApplications Power
jmsl0402agq.pdf

JMSL0402AGQ40V 1.6m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS40 V Low Gate Charge, Qg VGS(th)_Typ1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 183 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)1.6 m RDS(ON)_Typ (@ VGS = 4.5V)2.2 m Halogen-free and RoHS-compliant AEC-Q101 Q
Datasheet: JMSH0406PUQ , JMSH0406BUQ , JMSL0401PG , JMSL0401PGQ , JMSL0402AG , JMSL0402AGQ , JMSL0402AK , JMSL0402AKQ , 18N50 , JMSL0402BG , JMSL0402BGQ , JMSL0402MGQ , JMSL0402MTL , JMSL0402PG , JMSL0402PTL , JMSL0402TG , JMTR3002A .
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