JMTP130P04A Datasheet. Specs and Replacement
Type Designator: JMTP130P04A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 329 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0143 Ohm
Package: SOP8
JMTP130P04A substitution
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JMTP130P04A datasheet
jmtp130p04a.pdf
JMTP130P04A Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -40V, I = -12A PWM Applications DS D R ... See More ⇒
jmtp130n04a.pdf
JMTP130N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 10A Load Switch RDS(ON) ... See More ⇒
jmtp160p03d.pdf
-30V, -11A, 16m P-channel Power Trench MOSFET JMTP160P03D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -30 V Halogen-free; RoHS-compliant VGS(th)_Typ -1.7 V Pb-free plating ID(@VGS=10V) -11 A RDS(ON)_Typ(@VGS=-10V 12 mW Applications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application ... See More ⇒
jmtp170n06d.pdf
60V, 9.2A, 18m N-channel Power Trench MOSFET JMTP170N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V Halogen-free; RoHS-compliant VGS(th)_Typ 1.6 V Pb-free plating ID(@VGS=10V) 9.2 A RDS(ON)_Typ(@VGS=10V 16.7 mW Applications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application ... See More ⇒
Detailed specifications: JMTL2312A, JMTL2312L, JMTL2N7002KS, JMTL3134K, JMTL3134KT5, JMTL3134KT7, JMTP120C03D, JMTP130N04A, P55NF06, JMTP160P03D, JMTP170C04D, JMTP170N06A, JMTP170N06D, JMTP230C04D, JMTP240C03D, JMTP240N03D, JMTP250P03A
Keywords - JMTP130P04A MOSFET specs
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