JMTP160P03D Datasheet and Replacement
Type Designator: JMTP160P03D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2 nS
Cossⓘ - Output Capacitance: 258 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOP8
JMTP160P03D substitution
JMTP160P03D Datasheet (PDF)
jmtp160p03d.pdf

-30V, -11A, 16m P-channel Power Trench MOSFETJMTP160P03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V Halogen-free; RoHS-compliantVGS(th)_Typ -1.7 V Pb-free platingID(@VGS=10V) -11 ARDS(ON)_Typ(@VGS=-10V 12 mWApplications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application
jmtp170n06d.pdf

60V, 9.2A, 18m N-channel Power Trench MOSFETJMTP170N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V Halogen-free; RoHS-compliantVGS(th)_Typ 1.6 V Pb-free platingID(@VGS=10V) 9.2 ARDS(ON)_Typ(@VGS=10V 16.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application
jmtp110n06a.pdf

JMTP110N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V,12A Load Switch R
jmtp130n04a.pdf

JMTP130N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 10A Load SwitchRDS(ON)
Datasheet: JMTL2312L , JMTL2N7002KS , JMTL3134K , JMTL3134KT5 , JMTL3134KT7 , JMTP120C03D , JMTP130N04A , JMTP130P04A , IRF630 , JMTP170C04D , JMTP170N06A , JMTP170N06D , JMTP230C04D , JMTP240C03D , JMTP240N03D , JMTP250P03A , JMTP260N03D .
History: JMTP170N06D
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History: JMTP170N06D



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