All MOSFET. JMTP170N06A Datasheet

 

JMTP170N06A Datasheet and Replacement


   Type Designator: JMTP170N06A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.64 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0159 Ohm
   Package: SOP8
 

 JMTP170N06A substitution

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JMTP170N06A Datasheet (PDF)

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JMTP170N06A

JMTP170N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 10A Load SwitchR

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JMTP170N06A

60V, 9.2A, 18m N-channel Power Trench MOSFETJMTP170N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 60 V Halogen-free; RoHS-compliantVGS(th)_Typ 1.6 V Pb-free platingID(@VGS=10V) 9.2 ARDS(ON)_Typ(@VGS=10V 16.7 mWApplications RDS(ON)_Typ(@VGS=4.5V 18.3 mW Load Switch PWM Application

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JMTP170N06A

JMTP170C04DDescriptionJMT N And P-Channel Enhancement Mode MOSFETFeatures Application N-Channel: 40V, 10A Battery ProtectionR

 9.1. Size:1383K  jiejie micro
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JMTP170N06A

-30V, -11A, 16m P-channel Power Trench MOSFETJMTP160P03DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -30 V Halogen-free; RoHS-compliantVGS(th)_Typ -1.7 V Pb-free platingID(@VGS=10V) -11 ARDS(ON)_Typ(@VGS=-10V 12 mWApplications RDS(ON)_Typ(@VGS=-4.5V 16 mW Load Switch PWM Application

Datasheet: JMTL3134K , JMTL3134KT5 , JMTL3134KT7 , JMTP120C03D , JMTP130N04A , JMTP130P04A , JMTP160P03D , JMTP170C04D , AON7408 , JMTP170N06D , JMTP230C04D , JMTP240C03D , JMTP240N03D , JMTP250P03A , JMTP260N03D , JMTP3008A , JMTP3010D .

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