JMSL0603BGQ Datasheet. Specs and Replacement

Type Designator: JMSL0603BGQ

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 147 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 872 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PDFN5X6-8L

JMSL0603BGQ substitution

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JMSL0603BGQ datasheet

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JMSL0603BGQ

JMSL0603BGQ 60V 2.4m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 147 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.4 m RDS(ON)_Typ (@ VGS = 4.5V) 3.4 m Halogen-free and RoHS-compliant AEC-Q101... See More ⇒

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JMSL0603BGQ

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JMSL0603BGQ

JMSL0603AK 60V 2.6m N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.6 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 145 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.6 m RDS(ON)_Typ (@ VGS = 4.5V) 3.3 Halogen-free and RoHS-compliant m Applications Power M... See More ⇒

 6.2. Size:1291K  jiejie micro
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JMSL0603BGQ

60V, 154A, 2.7m N-channel Power SGT MOSFET JMSL0603PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 154 A Pb-free plating RDS(ON)_Typ(@VGS=10V 2.1 mW RDS(ON)_Typ(@VGS=4.5V 2.7 mW Applications Load Switch PW... See More ⇒

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Detailed specifications: JMSL0601BGQ, JMSL0601TG, JMSL0602AG, JMSL0602AGQ, JMSL0602MG, JMSL0602PG, JMSL0603AK, JMSL0603BG, IRF1010E, JMSL0603PG, JMSL0604AG, JMSL0604AGQ, JMTC018N03A, JMTC025N04D, JMTC035N04A, JMTC035N06D, JMTC060N06A

Keywords - JMSL0603BGQ MOSFET specs

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