JMTQ3006B Datasheet: MOSFET, N-Ch, 30V, 40A. Full specification with pinout and replacement list

JMTQ3006B Datasheet. Specs and Replacement

Type Designator: JMTQ3006B

Marking Code: Q3006B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 34 nC

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: PDFN3X3-8L

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JMTQ3006B datasheet

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30V, 61A, 5.4m N-channel Power Trench MOSFET JMTQ3005C Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 61 A Pb-free plating RDS(ON)_Typ(@VGS=10V 3.3 mW RDS(ON)_Typ(@VGS=4.5V 5.4 mW Applications Load Switch PW... See More ⇒

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30V, 41A, 8.8m N-channel Power Trench MOSFET JMTQ3008A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 30 V 100% Vds Tested VGS(th)_Typ 1.6 V Halogen-free; RoHS-compliant ID(@VGS=10V) 41 A Pb-free plating RDS(ON)_Typ(@VGS=10V 6.1 mW RDS(ON)_Typ(@VGS=4.5V 8.8 mW Applications Load Switch PW... See More ⇒