JMTE018N03A Datasheet. Specs and Replacement
Type Designator: JMTE018N03A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 291 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 863 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263
JMTE018N03A substitution
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JMTE018N03A datasheet
jmte018n03a.pdf
30V, 190A, 1.9m N-channel Power Trench MOSFET JMTE018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 30 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power M... See More ⇒
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Detailed specifications: JMSL1010PP, JMSL1010PU, JMSL10A13K, JMSL10A13L, JMSL10A13P, JMSL1509PG, JMTD2N7002KS, JMTD3134K, IRFP260, JMTE025N04D, JMTE035N04A, JMTE035N06D, JMTE060N06A, JMTE068N07A, JMTE3002B, JMTE3003A, JMTE6888A
Keywords - JMTE018N03A MOSFET specs
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