JMTE018N03A Datasheet and Replacement
Type Designator: JMTE018N03A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 291 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 29 nS
Cossⓘ - Output Capacitance: 863 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO263
JMTE018N03A substitution
JMTE018N03A Datasheet (PDF)
jmte018n03a.pdf

30V, 190A, 1.9m N-channel Power Trench MOSFETJMTE018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 30 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power M
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Datasheet: JMSL1010PP , JMSL1010PU , JMSL10A13K , JMSL10A13L , JMSL10A13P , JMSL1509PG , JMTD2N7002KS , JMTD3134K , 8205A , JMTE025N04D , JMTE035N04A , JMTE035N06D , JMTE060N06A , JMTE068N07A , JMTE3002B , JMTE3003A , JMTE6888A .
History: JMTE060N06A | IRFP250A
Keywords - JMTE018N03A MOSFET datasheet
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History: JMTE060N06A | IRFP250A



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