All MOSFET. JMTE018N03A Datasheet

 

JMTE018N03A Datasheet and Replacement


   Type Designator: JMTE018N03A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 291 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 863 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO263
 

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JMTE018N03A Datasheet (PDF)

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JMTE018N03A

30V, 190A, 1.9m N-channel Power Trench MOSFETJMTE018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 30 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power M

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JMTE018N03A

JMTE070N07A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 120A Load Switch R

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JMTE018N03A

JMTE035N06DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 180A Load SwitchR

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JMTE018N03A

JMTE060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 120A Load SwitchR

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Datasheet: JMSL1010PP , JMSL1010PU , JMSL10A13K , JMSL10A13L , JMSL10A13P , JMSL1509PG , JMTD2N7002KS , JMTD3134K , IRFP260 , JMTE025N04D , JMTE035N04A , JMTE035N06D , JMTE060N06A , JMTE068N07A , JMTE3002B , JMTE3003A , JMTE6888A .

History: PJS6414 | AP50P10NF | MMSF3P02HDR2 | AM50N10-18D | AP5N04MI | GSM3050S | GSM4172WS

Keywords - JMTE018N03A MOSFET datasheet

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