DMN2300UFB4 MOSFET Datasheet: N-Ch, 20V, 1.3A. Full specification with pinout and replacement list

DMN2300UFB4 Specs and Replacement

Type Designator: DMN2300UFB4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: X2DFN10063

DMN2300UFB4 substitution

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DMN2300UFB4 datasheet

..1. Size:165K diodes
dmn2300ufb4.pdf pdf_icon

A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Footprint of just 0.6mm2 thirteen times smaller than SOT23 ID V(BR)DSS RDS(ON) TA = +25 C 0.4mm profile ideal for low profile applications (Note 5) Low Gate Threshold Voltage 175m @ VGS = 4.5V 1.30A Fast Switching Speed 240m @ VGS =... See More ⇒

5.1. Size:275K diodes
dmn2300ufd.pdf pdf_icon

A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Gate Threshold Voltage ID max Fast Switching Speed V(BR)DSS RDS(on) Max TA = 25 C (Notes 4) Lead Free , RoHS Compliant (Note 1) 200m @ VGS = 4.5V 1.73A Halogen and Antimony Free. "Green" Device (Note 2) 260m @ VGS = 2.5V ... See More ⇒

5.2. Size:225K diodes
dmn2300ufl4.pdf pdf_icon

DMN2300UFL4 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Footprint of Just 1.3 mm2 TA = +25 C V(BR)DSS Max RDS(on) Ultra Low Profile Package - 0.4mm Profile (Note 6) On Resistance ... See More ⇒

6.1. Size:151K diodes
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