All MOSFET. JMTM300N03D Datasheet

 

JMTM300N03D Datasheet and Replacement


   Type Designator: JMTM300N03D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOT23-6L
 

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JMTM300N03D Datasheet (PDF)

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JMTM300N03D

JMTM300N03DDescriptionJMT Dual N-channel Enhancement Mode Power MosFETFeaturesApplications 30V, 4.8A Load SwitchRDS(ON)

 7.1. Size:1255K  jiejie micro
 jmtm300c02d.pdf pdf_icon

JMTM300N03D

JMTM300C02DDescriptionJMT N And P-channel Enhancement Mode Power MOSFETFeatures Applications N-channel: 20V, 3.8A Battery ProtectionRDS(ON)

 9.1. Size:331K  jiejie micro
 jmtm3406d.pdf pdf_icon

JMTM300N03D

JMTM3406DDescriptionJMT Dual N-channel Enhancement Mode Power MOSFETFeatures Application 30V, 3.8A Load SwitchR

 9.2. Size:1279K  jiejie micro
 jmtm330n06a.pdf pdf_icon

JMTM300N03D

60V, 4.8A, 35m N-channel Power Trench MOSFETJMTM330N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit Halogen-free; RoHS-compliantVDSS 60 V Pb-free platingVGS(th)_Typ 1.6 VID(@VGS=10V) 4.8 AApplicationsRDS(ON)_Typ(@VGS=10V 31 mW Load Switch RDS(ON)_Typ(@VGS=4.5V 35 mW PWM Application Power ManagementSOT-23-

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Keywords - JMTM300N03D MOSFET datasheet

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