JMSL10130AGD Spec and Replacement
Type Designator: JMSL10130AGD
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 47 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.124 Ohm
Package: PDFN5X6-8L-D
JMSL10130AGD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMSL10130AGD Specs
jmsl10130aud.pdf
JMSL10130AUD 100V 100m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 100 m RDS(ON)_Typ (@ VGS = 4.5V) 123 m Halogen-free and RoHS-compliant Applications Power Ma... See More ⇒
jmsl10130apd.pdf
JMSL10130APD 100V 111m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 2.4 A RDS(ON)_Typ (@ VGS = 10V) 111 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 155 m Applications Power Managerment ... See More ⇒
jmsl10130ak.pdf
JMSL10130AK 100V 115m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th) 1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 6A RDS(ON) (@ VGS = 10V) 115 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V) 144 m Applications Power Managerment in Telecom., Industria... See More ⇒
Detailed specifications: JMSL0608PK , JMSL0608PP , JMSL0608PU , JMSL1009PF , JMSL1009PG , JMSL1009PK , JMSL1009PP , JMSL1009PUN , 5N60 , JMSL10130AK , JMSL10130AL , JMSL10130AM , JMSL10130AP , JMSL10130APD , JMSL10130AUD , JMSL10130AY , JMSL10130PUD .
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