JMSL10130AGD Datasheet. Specs and Replacement
Type Designator: JMSL10130AGD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 24 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.3 nS
Cossⓘ - Output Capacitance: 47 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.124 Ohm
Package: PDFN5X6-8L-D
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JMSL10130AGD substitution
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JMSL10130AGD datasheet
jmsl10130aud.pdf
JMSL10130AUD 100V 100m N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 1.7 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 10 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 100 m RDS(ON)_Typ (@ VGS = 4.5V) 123 m Halogen-free and RoHS-compliant Applications Power Ma... See More ⇒
jmsl10130apd.pdf
JMSL10130APD 100V 111m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ 1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 2.4 A RDS(ON)_Typ (@ VGS = 10V) 111 m Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 4.5V) 155 m Applications Power Managerment ... See More ⇒
jmsl10130ak.pdf
JMSL10130AK 100V 115m N-Ch Power MOSFET Product Summary Features Parameter Typ. Unit Low Gate Charge VDS 100 V 100% UIS Tested, 100% Rg Tested VGS(th) 1.7 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 6A RDS(ON) (@ VGS = 10V) 115 m Halogen-free and RoHS-compliant RDS(ON) (@ VGS = 4.5V) 144 m Applications Power Managerment in Telecom., Industria... See More ⇒
Detailed specifications: JMSL0608PK, JMSL0608PP, JMSL0608PU, JMSL1009PF, JMSL1009PG, JMSL1009PK, JMSL1009PP, JMSL1009PUN, 5N60, JMSL10130AK, JMSL10130AL, JMSL10130AM, JMSL10130AP, JMSL10130APD, JMSL10130AUD, JMSL10130AY, JMSL10130PUD
Keywords - JMSL10130AGD MOSFET specs
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History: JMSL1009PK | JMSL0609AG
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