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JMSL0610AGD Spec and Replacement


   Type Designator: JMSL0610AGD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.6 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm
   Package: PDFN5X6-8L-D

 JMSL0610AGD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

JMSL0610AGD Specs

 ..1. Size:332K  jiejie micro
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JMSL0610AGD

JMSL0610AGD 60V 8.5m Dual N-Ch Power MOSFET Product Summary Features Parameter Value Unit Low RDS(ON) VDS 60 V Low Gate Charge VGS(th)_Typ 1.5 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 35 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 8.5 m RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant Applications Powe... See More ⇒

 0.1. Size:336K  jiejie micro
jmsl0610agdq.pdf pdf_icon

JMSL0610AGD

JMSL0610AGDQ 60V 8.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 38 A RDS(ON)_Typ (@ VGS = 10V) 8.5 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V) 10.2 m Halogen-free and RoHS-compliant AE... See More ⇒

 7.1. Size:1237K  jiejie micro
jmsl0612pp.pdf pdf_icon

JMSL0610AGD

60V, 11A, 11.4 m N-channel Power SGT MOSFET JMSL0612PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.9 V Halogen-free; RoHS-compliant ID(@VGS=10V) 11 A Pb-free plating RDS(ON)_Typ(@VGS=10V 8.0 mW RDS(ON)_Typ(@VGS=4.5V 11.4 mW Applications Load Switch P... See More ⇒

 7.2. Size:371K  jiejie micro
jmsl0615agdq.pdf pdf_icon

JMSL0610AGD

JMSL0615AGDQ 60V 10.5m Dual N-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS 60 V Low Gate Charge, Qg VGS(th)_Typ 1.6 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 33 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 10.5 m RDS(ON)_Typ (@ VGS = 4.5V) 13.5 m Halogen-free and RoHS-compliant AEC-Q101... See More ⇒

Detailed specifications: JMSL0609AK , JMSL0609AKQ , JMSL0609AP , JMSL0609APD , JMSL0609AU , JMSL0609AUQ , JMSL0609PPD , JMSL060SPGQ , IRF740 , JMSL0610AGDQ , JMSL0611PG , JMSL0611PGD , JMSL0611PP , JMTK480N06A , JMTK500N10A , JMTK50N03A , JMTK50N06B .

History: AOTF10T60P

Keywords - JMSL0610AGD MOSFET specs

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