JMSL0611PP Spec and Replacement
Type Designator: JMSL0611PP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0118 Ohm
Package: SOP8
JMSL0611PP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JMSL0611PP Specs
jmsl0611pp.pdf
60V, 10A, 12.3m N-channel Power SGT MOSFET JMSL0611PP Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 10 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW... See More ⇒
jmsl0611pu.pdf
60V, 34A, 12.2m N-channel Power SGT MOSFET JMSL0611PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.7 V Halogen-free; RoHS-compliant ID(@VGS=10V) 34 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.0 mW RDS(ON)_Typ(@VGS=4.5V 12.2 mW Applications Load Switch PW... See More ⇒
jmsl0611pg.pdf
60V, 69A, 12.3m N-channel Power SGT MOSFET JMSL0611PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.8 V Halogen-free; RoHS-compliant ID(@VGS=10V) 69 A Pb-free plating RDS(ON)_Typ(@VGS=10V 9.1 mW RDS(ON)_Typ(@VGS=4.5V 12.3 mW Applications Load Switch PW... See More ⇒
Detailed specifications: JMSL0609AU , JMSL0609AUQ , JMSL0609PPD , JMSL060SPGQ , JMSL0610AGD , JMSL0610AGDQ , JMSL0611PG , JMSL0611PGD , IRF540 , JMTK480N06A , JMTK500N10A , JMTK50N03A , JMTK50N06B , JMTK50P02A , JMTK50P03A , JMTK58N06B , JMTK60N04B .
Keywords - JMSL0611PP MOSFET specs
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