ZXMN2B01F MOSFET. Datasheet pdf. Equivalent

   Type Designator: ZXMN2B01F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Qgⓘ - Total Gate Charge: 4.8 nC
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23

ZXMN2B01F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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