2SK3235 MOSFET. Datasheet pdf. Equivalent

2SK3235 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK3235 Datasheet (PDF)

0.1. 2sk3235.pdf Size:46K _1

2SK3235Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1371 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 0.3 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanch

8.1. 2sk3234.pdf Size:138K _1

2SK3234 N MOS FETADJ-208-696F (Z) 7 2002.01 RDS(on) =0.65 typ. IDSS=1A max (at VDS=500V) tf=25ns typ (at VGS=10V, VDD=250V, ID=4A) (Qg)Qg=25nC typ (VDD=400V,

8.2. 2sk3236.pdf Size:228K _toshiba

2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON resistance: R = 13.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 42 S (typ.) fs Low leakage current: IDSS = 100 A (max) (VDS = 60 V)

 8.3. 2sk3230.pdf Size:171K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.4. 2sk3230.pdf Size:123K _nec

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3230BN-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230B is suitable for converter of ECM. 0.3 0.05 0.1+0.10.05 General-purpose product. FEATURES 3 Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) 2 1 Especial

 8.5. 2sk3233.pdf Size:46K _hitachi

2SK3233Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1369 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 1.1 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche

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MOSFET: IPB180N04S4L-H0 | IPB180N04S4L-01 | IPB120P04P4L-03 | IPB120N10S4-05 | IPB120N10S4-03 | IPB100N12S3-05 | IPB08CN10NG | IPB015N04N6 | IPAN65R650CE | IPAN60R180P7S | IPA60R360P7S | IPA60R180P7S | IGT60R190D1S | IGT60R070D1 | IGOT60R070D1 | IGO60R070D1