2SK3235 Datasheet and Replacement

2SK3235Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1371 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 0.3 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 50 ns typ (at VGS = 10 V, VDD = 250 V, ID = 7.5 A) Low gate charge: Qg = 48 nC typ (at VDD = 400 V, VGS = 10 V, ID = 15 A) Avalanch

isc N-Channel MOSFET Transistor 2SK3235FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

2SK3234 N MOS FETADJ-208-696F (Z) 7 2002.01 RDS(on) =0.65 typ. IDSS=1A max (at VDS=500V) tf=25ns typ (at VGS=10V, VDD=250V, ID=4A) (Qg)Qg=25nC typ (VDD=400V,

2SK3236 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications 4 V gate drive Low drain-source ON resistance: R = 13.5 m (typ.) DS (ON) High forward transfer admittance: |Y | = 42 S (typ.) fs Low leakage current: IDSS = 100 A (max) (VDS = 60 V)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK3230BN-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK3230B is suitable for converter of ECM. 0.3 0.05 0.1+0.10.05 General-purpose product. FEATURES 3 Low noise: -108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 k) 2 1 Especial

2SK3233Silicon N Channel MOS FETHigh Speed Power SwitchingADE-208-1369 (Z)1st. EditionMar. 2001Features Low on-resistance: RDS(on) = 1.1 typ. Low leakage current: IDSS = 1 A max (at VDS = 500 V) High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A) Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A) Avalanche

isc N-Channel MOSFET Transistor 2SK3234FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3236FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

isc N-Channel MOSFET Transistor 2SK3233FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr