JMSL1040AVQ Datasheet and Replacement
Type Designator: JMSL1040AVQ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 8.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 10.6
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
tr ⓘ - Rise Time: 16.6
nS
Cossⓘ -
Output Capacitance: 85
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036
Ohm
Package: U-DFN2020-6L
-
MOSFET ⓘ Cross-Reference Search
JMSL1040AVQ Datasheet (PDF)
..1. Size:337K jiejie micro
jmsl1040avq.pdf 
JMSL1040AVQ100V 29mN-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 10.6 A RDS(ON)_Typ (@ VGS = 10V)29 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications U
4.1. Size:280K jiejie micro
jmsl1040av.pdf
JMSL1040AV100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V Low Input Capacitance VGS(th)_Typ1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 4.7 A RDS(ON)_Typ (@ VGS = 10V) Excepcional RDS(ON) in Low-profile DFN2020-6L 29 m RDS(ON)_Typ (@ VGS = 4.5V)37 m Pb-free Lead Plating Ha
5.1. Size:377K jiejie micro
jmsl1040agq.pdf
JMSL1040AGQ100V 29m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 27 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
5.2. Size:407K jiejie micro
jmsl1040auq.pdf
JMSL1040AUQ100V 29m N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.8 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 20 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliant AEC-Q101 Qualifi
5.3. Size:298K jiejie micro
jmsl1040aud.pdf
JMSL1040AUD100V 31mDual N-Ch Power MOSFETProduct SummaryFeaturesParameter Low Gate Charge Value Unit VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 17 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)31 m RDS(ON)_Typ (@ VGS = 4.5V)39 mApplications Power Management in C
5.4. Size:323K jiejie micro
jmsl1040agdq.pdf
JMSL1040AGDQ100V 28m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS100 V Low Gate Charge, Qg VGS(th)_Typ1.9 V 100% UIS and Rg Tested ID (@ VGS = 10V) (1) 22 A RDS(ON)_Typ (@ VGS = 10V)28 Pb-free Lead Plating m Halogen-free and RoHS-compliant AEC-Q101 Qualified for Automotive Applications
5.5. Size:304K jiejie micro
jmsl1040agd.pdf
JMSL1040AGD100V 28m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.4 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 28 m RDS(ON)_Typ (@ VGS = 4.5V)40 m Halogen-free and RoHS-compliantApplications Power
5.6. Size:369K jiejie micro
jmsl1040ag.pdf
JMSL1040AG100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 18.9 A RDS(ON)_Typ (@ VGS = 10V)29 m Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 4.5V)39 m Halogen-free and RoHS-compliantApplications Power Mana
5.7. Size:336K jiejie micro
jmsl1040au.pdf
JMSL1040AU100V 29m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 18 A RDS(ON)_Typ (@ VGS = 10V) Halogen-free and RoHS-compliant 29 m RDS(ON)_Typ (@ VGS = 4.5V)38 mApplications Power Management in Computing,
5.8. Size:341K jiejie micro
jmsl1040ac jmsl1040ae.pdf
JMSL1040ACJMSL1040AE100V 30m N-Ch Power MOSFETProduct SummaryFeaturesParameter Typ. Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)1.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 26 A RDS(ON) (@ VGS = 10V)30 Pb-free Lead Plating m Halogen-free and RoHS-compliantApplications Power Managerment in Telecom., Industrial Autom
5.9. Size:493K jiejie micro
jmsl1040ak.pdf
JMSL1040AK100V 32mW N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Halogen-free and RoHS-compliant ID (@ VGS = 10V) (1) 24 A RDS(ON)_typ (@ VGS = 10V)32 mW RDS(ON)_typ (@ VGS = 4.5V)43 mWApplications Power Managerment in Telecom., Industrial Automation, CE
5.10. Size:310K jiejie micro
jmsl1040apd.pdf
JMSL1040APD100V 31m Dual N-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low RDS(ON) VDS100 V Low Gate Charge VGS(th)_Typ2.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 12.3 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V)31 m RDS(ON)_Typ (@ VGS = 4.5V)40 m Halogen-free and RoHS-compliantApplications Power M
5.11. Size:285K jiejie micro
jmsl1040ay.pdf
JMSL1040AY100V 30m N-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low Gate Charge VDS100 V 100% UIS Tested, 100% Rg Tested VGS(th)_Typ2.0 V Pb-free Lead Plating ID (@ VGS = 10V) (1) 13 A Halogen-free and RoHS-compliant RDS(ON)_Typ (@ VGS = 10V)30 m RDS(ON)_Typ (@ VGS = 4.5V)38 mApplications Power Management in Computing,
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