JVE102G MOSFET Datasheet: N-Ch, 100V, 200A. Full specification with pinout and replacement list

JVE102G Specs and Replacement

Type Designator: JVE102G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: TO263

JVE102G substitution

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JVE102G datasheet

..1. Size:1022K jiejie micro
jve102g.pdf pdf_icon

JVE102G 100V 2.4mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 2.8 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 200 A RDS(ON) (@ VGS = 10V) 2.4 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

8.1. Size:1078K jiejie micro
jve102t.pdf pdf_icon

JVE102T 100V 2.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% R 100% UIS Tested, 100% Rgg Tested Tested ID (@ VGS = 10V) (1) 247 A Pb-free Lead Plating Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.3 mW ... See More ⇒

9.1. Size:716K jiejie micro
jve101n.pdf pdf_icon

JVE101N 100V 1.6mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 260 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.6 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC... See More ⇒

9.2. Size:1036K jiejie micro
jve103t.pdf pdf_icon

JVE103T 100V 3.0mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.2 V 100% UIS Tested, 100% Rgg Tested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 184 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 3 mW Pb-free Lead Plating ... See More ⇒

Detailed specifications: JMSL1040AUD, JMSL1040AUQ, JMSL1040AV, JMSL1040AVQ, JMSL1040AY, JMSL1040PGDQ, JMSL1040PGQ, JVE101N, IRF1407, JVE102T, JVE103T, JVL101N, JVL102E, JVL102T, JVL102Y, JMTV3400A, JMTY11DN10A