JVL102E PDF and Equivalents Search

 

JVL102E Specs and Replacement

Type Designator: JVL102E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 290 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 246 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 1318 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm

Package: TOLL

JVL102E substitution

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JVL102E datasheet

 ..1. Size:1079K  jiejie micro
jvl102e.pdf pdf_icon

JVL102E

JVL102E 100V 2.1mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th) 3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 246 A RDS(ON) (@ VGS = 10V) 2.1 mW Pb-free Lead Plating Halogen-free and RoHS-compliant Applications Motor Driving in Power Tool, E-vehicle, Robotics Curr... See More ⇒

 8.1. Size:604K  jiejie micro
jvl102t.pdf pdf_icon

JVL102E

JVL102T 100V 1.9mW TOLL N-Ch Power MOSFET Product Summary Features Ultra-low ON-resistance, RDS(ON) Parameter Value Unit VDS 100 V Low Gate Charge, Qg VGS(th)_Typ 3.0 V 100% UIS and Rg Tested ID (@ VGS = 10V) (2) 263 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 1.9 mW Halogen-free and RoHS-compliant Applications Power Management in Telecom., Ind... See More ⇒

 8.2. Size:557K  jiejie micro
jvl102y.pdf pdf_icon

JVL102E

JVL102Y 100V 2.8mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) Ultra-low RDS(ON) VDS 100 V Low Gate Charge Low Gate Charge VGS(th)_Typ 3.0 V 100% UIS Tested, 100% RggTested 100% UIS Tested, 100% R Tested ID (@ VGS = 10V) (1) 200 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = 10V) 2.8 Pb-free Lead Plating m... See More ⇒

 9.1. Size:788K  jiejie micro
jvl101n.pdf pdf_icon

JVL102E

JVL101N 100V 1.3mW N-Ch Power MOSFET Features Product Summary Parameter Value Unit Ultra-low RDS(ON) VDS 100 V Low Gate Charge VGS(th)_Typ 2.9 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 325 A RDS(ON)_Typ (@ VGS = 10V) Pb-free Lead Plating 1.3 mW Applications Power Management in Computing, CE, IE 4.0, Communications Current Switching in DC... See More ⇒

Detailed specifications: JMSL1040AY, JMSL1040PGDQ, JMSL1040PGQ, JVE101N, JVE102G, JVE102T, JVE103T, JVL101N, RFP50N06, JVL102T, JVL102Y, JMTV3400A, JMTY11DN10A, JMTY2310A, JVC085T, JVC103K, JVC103T

Keywords - JVL102E MOSFET specs

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